smd type transistors 2SD1615A features world standard miniature package. low v ce(sat) v ce(sat) =0.15v absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 120 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 6v collector current (dc) i c 1a collector current (pulse) *1 i c 2a total power dissipation at 25 ambient temperature*2 p t 2.0 w junction temperature t j 150 storage temperature t stg -55to+150 *1 pulse test pw 10ms, duty cycle 50%. *2 when mounted on ceramic substrate of 16 cm 2 x0.7mm electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb = 120 v, i e = 0 a 100 na emitter cutoff current i ebo v eb =6.0v,i c = 0 a 100 na dc current gain * h fe v ce =2.0v,i c = 100 ma 135 400 collector saturation voltage * v ce(sat) i c =1a,i b = 50 ma 0.15 0.3 v base saturation voltage * v be(sat) i c =1a,i b =50ma 0.9 1.2 v base-emitter voltage * v be v ce =2.0v,i c = 50 ma 600 700 mv gain bandwidth product f t v ce =2.0v,i e = -100 ma 80 160 mhz output capacitance c ob v cb =10v,i e = 0, f = 1.0 mhz 19 pf * pulsed: pw 350 s, duty cycle 2% h fe classification marking gq gp hfe 135 270 200 400 sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type transistors smd type transistors smd type product specification smd type transistors smd type product specification 4008-318-123
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